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| CR8PM-12 Thyristor Medium Power Use REJ03G0359-0100 Rev.1.00 Aug.20.2004 Features * * * * IT (AV) : 8 A VDRM : 600 V IGT : 15 mA Viso : 1500 V * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220F 2 3 1 1. Cathode 2. Anode 3. Gate 12 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR(DC) VDRM VD(DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Rev.1.00, Aug.20.2004, page 1 of 6 CR8PM-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Viso Ratings 12.6 8 120 60 5 0.5 6 10 2 - 40 to +125 - 40 to +125 2.0 1500 Unit A A A A2s W W V V A C C g V Conditions Commercial frequency, sine half wave 180 conduction, Tc = 81C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Symbol IRRM IDRM VTM Rated value Min. Typ. Max. -- -- -- -- -- -- 2.0 2.0 1.4 Unit mA mA V Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied Tc = 25C, ITM = 25 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1 A Tj = 125C, VD = 1/2 VDRM Tj = 25C, VD = 6 V, IT = 1 A Tj = 25C, VD = 12 V Junction to caseNote1 Gate trigger voltage VGT -- -- 1.0 V Gate non-trigger voltage VGD 0.2 -- -- V Gate trigger current IGT -- -- 15 mA Holding current IH -- 15 -- mA Thermal resistance Rth (j-c) -- -- 3.7 C/W Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Rev.1.00, Aug.20.2004, page 2 of 6 CR8PM-12 Performance Curves Maximum On-State Characteristics 103 7 Tc = 125C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 200 Rated Surge On-State Current Surge On-State Current (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 10 2 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 Typical Example VFGM = 6V PGM = 5W VGT = 1V IGT = 15mA PG(AV) = 0.5W VGD = 0.2V IFGM = 2A 10-1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 101 100 10-1 10-2 10-3 2 3 5 710-22 3 5 710-12 3 5 7 100 2 3 5 7 101 Junction Temperature (C) Time (s) Rev.1.00, Aug.20.2004, page 3 of 6 CR8PM-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 32 Average Power Dissipation (W) Case Temperature (C) 28 24 20 16 12 8 4 0 0 2 4 6 8 140 120 100 80 60 40 20 0 0 360 Resistive, inductive loads = 30 60 90 120 180 360 Resistive, inductive loads 10 12 14 16 90 = 30 60 120 180 2 4 6 8 10 12 14 16 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) 32 Average Power Dissipation (W) 24 20 16 12 8 4 0 0 2 4 6 8 Case Temperature (C) 28 140 120 100 80 60 40 20 0 0 2 4 6 8 10 = 30 60 90 120 180 360 Resistive loads = 30 60 90 120 180 360 Resistive loads 10 12 14 16 12 14 16 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 Resistive, inductive loads Maximum Average Power Dissipation (Rectangular Wave) 32 Average Power Dissipation (W) 24 20 16 12 8 4 0 0 360 Case Temperature (C) 28 Resistive, inductive loads 140 120 100 80 60 40 20 360 = 30 60 90 180 120 270 DC = 30 0 2 4 90 180 60 120 270 DC 2 4 6 8 10 12 14 16 0 6 8 10 12 14 16 Average On-State Current (A) Average On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 6 CR8PM-12 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = vV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Typical Example Typical Example Tj = 125C Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Turn-Off Time vs. Junction Temperature 80 Typical Example Turn-Off Time (s) IT = 8A, 70 - di/dt = 5A/s, VD = 300V, 60 dv/dt = 20V/s, VR = 50V 50 40 30 20 10 0 0 20 40 Typical Example Distribution 60 80 100 120 140 160 Junction Temperature (C) Junction Temperature (C) Repetitive Peak Reverse Voltage (Tj = tC) x 100 (%) Repetitive Peak Reverse Voltage (Tj = 25C) Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 Typical Example 7 5 3 2 102 7 5 3 2 101 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (C) Gate Current Pulse Width (s) Rev.1.00, Aug.20.2004, page 5 of 6 CR8PM-12 Package Dimensions TO-220F EIAJ Package Code Conforms JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10.5 max 5.2 2.8 5.0 1.2 17 3.6 13.5 min 1.3 max 0.8 8.5 3.2 0.2 2.54 2.54 0.5 2.6 4.5 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR8PM-12A CR8PM-12A-A8 Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. 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